Datasheet Details
| Part number | SPB-2026Z |
|---|---|
| Manufacturer | Sirenza Microdevices |
| File Size | 343.87 KB |
| Description | InGaP Amplifier |
| Download | SPB-2026Z Download (PDF) |
|
|
|
| Part number | SPB-2026Z |
|---|---|
| Manufacturer | Sirenza Microdevices |
| File Size | 343.87 KB |
| Description | InGaP Amplifier |
| Download | SPB-2026Z Download (PDF) |
|
|
|
Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package.
This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment.
Preliminary Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
SPB-2026Z | 0.7 GHz to 2.2 GHz 2W InGaP Amplifier | RFMD |
| Part Number | Description |
|---|---|
| SPB-3018 | Medium Power Active Bias InGaP/GaAs HBT Amplifier |
| SPB-3018Z | Medium Power Active Bias InGaP/GaAs HBT Amplifier |