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Sirenza Microdevices

SXT-289 Datasheet Preview

SXT-289 Datasheet

Medium Power GaAs HBT Amplifier

No Preview Available !

Product Description
Sirenza Microdevices’ SXT-289 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 1800-2500 MHz
cellular, ISM, WLL and Wideband CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
45
40
35
30
25
20
15
10
5
0
www.DataSheet4U.com
Typical IP3, P1dB, Gain
IP3
P1dB
Gain
1960 MHz
2140 MHz
2450 MHz
SXT-289
1800-2500 MHz Medium Power
GaAs HBT Amplifier
Product Features
Patented High Reliability GaAs HBT Technology
High Output 3rd Order Intercept : +42 dBm typ.
at 2450 MHz
Surface-Mountable Power Plastic Package
Applications
Balanced Amplifier Configuration App. Note
(AN-011)
PCS Systems
WLL, Wideband CDMA Systems
ISM Systems
Symbol
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25°C
P1dB Output Power at 1dB Compression
S21 Small signal gain
S11 Input VSWR
IP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
NF Noise Figure
ID
Rth, j-l
Device Current
Thermal Resistance (junction - lead)
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
VS = 8V
RBIAS = 27 Ohms
VD = 5 V typ.
Units
dBm
dBm
dBm
dB
dB
dB
-
dBm
dBm
dBm
dB
dB
dB
mA
° C/W
Min. Typ. Max.
22.5
13.5
37.5
23.5
23.5
23.0
15.0
15.0
13.8
1.4:1
1.6:1
1.6:1
41.0
40.0
42.0
4.4
4.5
5.4
16.6
85 105 120
108
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101157 Rev G




Sirenza Microdevices

SXT-289 Datasheet Preview

SXT-289 Datasheet

Medium Power GaAs HBT Amplifier

No Preview Available !

SXT-289 1800-2500 MHz Power Amplifier
1960 MHz Application Circuit
Note: Tuned for Output IP3
Data, VS=8V, ID=105mA, RBIAS=27 Ohms
P1dB vs Frequency
26
25C
25 -40C
85C
24
23
22
21
1930
1940
1950
1960
MHz
1970
1980
1990
Gain vs. Frequency
20
25C
18 -40C
85C
16
14
12
10
1930 1940 1950 1960 1970 1980 1990
MHz
0
-5
-10
-15
-20
-25
-30
-35
-40
1930
Input/Output Return Loss,
Isolation vs Frequency
T=25oC
S11
S22
S12
1940 1950 1960 1970 1980 1990
MHz
Third Order Intercept vs. Frequency
42 (POUT per tone = 11dBm)
41
40
39
38
37
1930
25C
-40C
85C
1940 1950
1960
1970
1980
1990
MHz
Third Order Intercept vs Tone Power
42
41
40
39
38
37
0
25C
-40C
85C
2 4 6 8 10 12 14 16
POUT per tone (dBm)
180
160
140
120
100
80
60
40
20
0
0
Device Current vs. Source Voltage
25C
-40C
85C
2 4 6 8 10
VS (V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101157 Rev G


Part Number SXT-289
Description Medium Power GaAs HBT Amplifier
Maker Sirenza Microdevices
Total Page 9 Pages
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