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SXT-289 Datasheet Medium Power GaAs HBT Amplifier

Manufacturer: Sirenza Microdevices

Datasheet Details

Part number SXT-289
Manufacturer Sirenza Microdevices
File Size 330.00 KB
Description Medium Power GaAs HBT Amplifier
Download SXT-289 Download (PDF)

General Description

Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications.

Overview

Product.

Key Features

  • Patented High Reliability GaAs HBT Technology.
  • High Output 3rd Order Intercept : +42 dBm typ.
  • at 2450 MHz Surface-Mountable Power Plastic Package IP3 P1dB Gain.