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SKD4N65F Datasheet 650V N-Channel MOSFET

Manufacturer: SkySilicon

Overview: SkySilicon SKD4N65F 650V N-Channel MOSFET .

Datasheet Details

Part number SKD4N65F
Manufacturer SkySilicon
File Size 805.71 KB
Description 650V N-Channel MOSFET
Download SKD4N65F Download (PDF)

General Description

 Application  Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.2 PD TJ, TSTG Maximum Power Dissipation Junction & Storage Temperature Range TC=25°C TC=100°C 25 10 -55~150 Unit V V A W °C Thermal Characteristics Symbol Parameter Rθjc Thermal Resistance-Junction to Case Rθja Thermal Resistance-Junction to Ambient Rev.

0.9 – Mar 1 Typical 5.5 62.5 Unit ℃/W SkySilicon SkySilicon SKD4N65F 650V N-Channel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.

Static Characteristics BVDSS Drain-Source Breakdow

Key Features

  • S.
  • 650V/4A RDS(ON)= 3Ω max@ VGS=10V.
  • Lead free and Green Device Available.
  • Low Rds-on to Minimize Conductive Loss.
  • High avalanche Current.
  • PIN.