SKY67111-396LF: 0.7-1.2 GHz High Linearity, Active Bias
• CDMA, WCDMA, and LTE cellular infrastructure
• Ultra low-noise systems
• Ultra Low Noise Figure: 0.51 dB @ 0.9 GHz
• Input return loss > 18 dB @ 0.9 GHz
• High IIP3 performance: +18.9 dBm @ 0.9 GHz
• Adjustable supply current and gain
• Temperature and process-stable active bias
• Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per
Figure 1. SKY67111-396LF Block Diagram
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Figure 2. SKY67111-396LF Pinout – 8-Pin DFN
The SKY67111-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA)
with an active bias and high linearity performance. The advanced
GaAs pHEMT enhancement mode process provides excellent
return loss, low noise, and high linearity performance.
The internal active bias circuitry provides stable performance over
temperature and process variation. The device offers the ability to
externally adjust supply current and gain. Supply voltage is
applied to the RFOUT/VDD pin through an RF choke inductor.
Pin 4 (VBIAS) should be connected to RFOUT/VDD through an
external resistor to control the supply current. The RFIN and
RFOUT/VDD pins should be DC blocked to ensure proper
operation. Pin 5 (FEEDBACK) is connected through an RC network
to externally adjust the gain of the device without affecting the
Noise Figure (NF) of the LNA.
The SKY67111-396LF operates in the frequency range of 0.7 to
1.2 GHz with proper tuning.
The LNA is manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat
No-Lead (DFN) package. A functional block diagram is shown in
Figure 1. The pin configuration and package are shown in
Figure 2. Signal pin assignments and functional pin descriptions
are provided in Table 1.
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201752A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • March 12, 2012