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Si8286 - SiC FET-Ready ISODrivers

Download the Si8286 datasheet PDF. This datasheet also covers the Si8285 variant, as both devices belong to the same sic fet-ready isodrivers family and are provided as variant models within a single manufacturer datasheet.

General Description

4 2.2 Device Behavior

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Key Features

  • The Si828x (Si8285 and Si8286) are isolated, high current gate drivers with integrated system safety and feedback functions. The devices are ideal for driving Silicon Carbide (SiC) FETs, power MOSFETs, and IGBTs used in a wide variety of inverter and motor control.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (Si8285-Skyworks.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
Si8286 ISODrivers Silicon Laboratories
SI8281 4.0 Amp ISODrivers Silicon Laboratories
SI8282 4.0 Amp ISODrivers Silicon Laboratories
SI8283 4.0 Amp ISODrivers Silicon Laboratories
SI8284 4.0 Amp ISODrivers Silicon Laboratories

Other Datasheets by Skyworks Solutions

Part Number Description
Si8285 SiC FET-Ready ISODrivers
Si8230 0.5 and 4.0 Amp ISOdrivers
Si8231 0.5 and 4.0 Amp ISOdrivers
Si8233 0.5 and 4.0 Amp ISOdrivers
Si8234 0.5 and 4.0 Amp ISOdrivers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Si8285/86 Data Sheet SiC FET-Ready ISODrivers with System Safety Features The Si828x (Si8285 and Si8286) are isolated, high current gate drivers with integrated system safety and feedback functions. The devices are ideal for driving Silicon Carbide (SiC) FETs, power MOSFETs, and IGBTs used in a wide variety of inverter and motor control applications. The Si8285 and Si8286 isolated gate drivers utilize Skyworks' proprietary silicon isolation technology, supporting up to 5.0 kVrms withstand voltage per UL1577. This technology enables higher performance, reduced variation with temperature and age, tighter part-to-part matching, and superior common-mode rejection compared to other isolated gate driver technologies.