SDR6304 Datasheet | Solid States Devices

Features : - - - - - - - - Fast Recovery: 50nsec Maximum Low Forward Voltage Drop Low Reverse Leakage Current Single Chip Construction Hermetically Sealed For High Efficiency Applications Replacement for 1N6304, 1N6305, and 1N6306 2/ TX, TXV, and S-Level Screening Available Maximum Ratings 3/ Peak Repetitive Reverse Voltage and DC Blocking Voltage @ 100µA Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) SDR6304 SDR6305 SDR6306 SDR6307 Symbol VRRM VRWM VR Io IFSM TOP & TSTG RθJC Value 50 100 150 200 70 800 Units Volts Amps Amps ºC ºC/W Peak Surge Current (8.3 ms Pulse, Half Sine Wave, TA = 25 °C) Operating & Storage Temperature Thermal Resistance (Junction to Case) ..net -55 to +175 0.8 Notes: 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all maximum ratings/electrical characteristics @25°C. DO-5 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0141A Solid State Devices, Inc. 14701 Firestone Blvd - La Mirada, CA 90638 Phone: (562) 404-4474 - Fax: (562) 404-1773 ssdi@ssdi-power. - .ssdi-power. SDR6306 Symbol VF1 VF2 TA = 25 ºC TA = 150 ºC TA = 25 ºC IR1 IR2 t RR CJ Electrical Characteristics 3/ Maximum Instantaneous Forward Voltage Drop (IF =70Adc, TA = 25 ºC, 300-500μs Pulse) Maximum Instantaneous Forward Voltage Drop (IF =70Adc, TA = 150 ºC, 300-500μs Pulse) Maximum Reverse Leakage Current (Rated VR, 300μs minimum pulse) Maximum Reverse Recovery Time (IF = 500 m A, IR = 1 Amp, IRR = 250 m A) Maximum Junction Capacitance (VR = 10VDC, TA = 25ºC, f = 1MHz) Value 0.975 0.84 25 30 50...