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Solid States Devices

SFF80N20 Datasheet Preview

SFF80N20 Datasheet

Avalanche Rated N-channel MOSFET

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF80N20 ___ ___ ___
│ │ └ Screening 2/
││
__ = Not Screened
││
TX = TX Level
││
TXV = TXV Level
S = S Level
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Package 3/ 4/
M = TO-254
N = TO-258
Z = TO-254Z
P = TO-259
SFF80N20 Series
80 AMP , 200 Volts, 25 m
Avalanche Rated N-channel
MOSFET
Features:
Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Maximum Ratings5/
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
Single and Repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
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Maximum Thermal Resistance
(Junction to Case)
continuous
transient
@ TC = 25ºC
@ TC = 25ºC
@ TC = 175ºC
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
Symbol
VDSS
VGS
ID1
ID2
ID3
IAR
EAS
EAR
PD
TOP & TSTG
RθJC
Value
200
±20
±30
55
80
48
60
1500
50
150
-55 to +175
1.0
(typ.0.75)
Units
V
V
A
A
A
mJ
W
ºC
ºC/W
TO-254 (M)
TO-254Z (Z)
TO-258 (N)
TO-259 (P)
NOTES:
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ For lead bending options / pinout configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC




Solid States Devices

SFF80N20 Datasheet Preview

SFF80N20 Datasheet

Avalanche Rated N-channel MOSFET

No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics5/
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
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SFF80N20 Series
VGS = 0V, ID = 250μA
VVVGGSGSS===11010V0VV,,I,DIIDD===44848A8AA,,T,TTj=j=j=11272555oooCCC
VVVDDSDSS===VVVGGSGS,S,I,IDDID===44.4.00.m0mmAAA,,T,TTj=j=j=1-225555oooCCC
VVGSGS==±2±02V0V, T, Tj=j=12255ooCC
VVVDDSSDS===222000000VVV,, ,VVVGGSSGS===000VVV,, ,TTTjj ==j =11225550oooCCC
VDS = 10V, ID = 48A, Tj = 25oC
VGS = 10V
VDS = 100V
ID = 48A
VGS = 10V
VDS = 100V
ID = 48A
RG = 4.0, pw= 3us
IF = 48A, VGS = 0V
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
VGS = 0V
VDS = 25V
f = 1 MHz
Symbol
BVDSS
RDS(on)
VGS(th)
IGSS
IDSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr1
Irm1
Qrr1
trr2
Irm2
Qrr2
Ciss
Coss
Crss
Min
200
––
––
––
2.5
1.5
––
––
––
––
––
––
25
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
220
25
50
65
4.5
3.6
5
10
30
0.01
2.5
25
50
150
45
75
50
50
110
50
0.90
190
11
1
310
17
2.5
5300
1050
175
Max
––
30
65
––
5.0
––
6
±100
––
25
150
––
––
250
65
120
75
75
135
75
1.5
250
––
––
––
––
––
––
––
––
Units
V
m
V
nA
μA
μA
μA
Mho
nC
nsec
V
nsec
A
μC
nsec
A
μC
pF
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00129H
DOC


Part Number SFF80N20
Description Avalanche Rated N-channel MOSFET
Maker Solid States Devices
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