Datasheet Details
| Part number | SD11803 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 102.54 KB |
| Description | 1200V 10A Silicon Carbide Schottky Diode |
| Download | SD11803 Download (PDF) |
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Overview: SD11803 1200V 10A Silicon Carbide Schottky Diode - 1 KEY.
| Part number | SD11803 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 102.54 KB |
| Description | 1200V 10A Silicon Carbide Schottky Diode |
| Download | SD11803 Download (PDF) |
|
|
|
1200V 10A Silicon Carbide Diode (isolated back side) ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C.
Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation, max.
Maximum Case Temperature Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature for 10 Seconds SYMBOL VR VRRM VRSM VDC IF(avg) IFRM IFSM PD TC(max) TJ(max) TOP TSTG TL VALUE 1200V 1200V 1200V 1200V 10A 10A 44A 43A 33A 66W 21W 175°C 225°C -55°C to +210°C -55°C to +210°C 260°C TEST CONDITIONS TC = 25°C TC = 125°C TC = 125°C, tp = 10ms, Half Sine Pulse TC = 25°C, tp = 8.3ms, Half Sine Pulse TC = 150°C, tp = 8.3ms, Half Sine Pulse TC = 25°C TC = 125°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com FORWARD C TYPICAL PERFORMANCE CURVES 8 6 SD11803 1204 0V 10A Silicon Carbide Schottky Diode - 2 2 0 0 0.5 1 1.5 2 2.5 3 FORWARD VOLTAGE (VF) V FORWARD CURRENT (IF) A REVERSE LEAKAGE CURRENT (IR) µA FORWARD VOLTAGE vs FORWARD CURRENT 18 16 REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE 30 TJ = 175°C 25 14 TJ = -55°C TJ = 25°C TJ = 175°C 12 20 CAPACITANCECA(CP)ApCIFTANCE (C) pF REVERSE LEAKAGE CURRENT (IR) µA 10 15 8 6 10 4 5 2 TJ = 25°C 0 0 0 0.5 1 1.5 2 2.5 3 0 150 300 450 600 750 900 1050 1200 1350 CAPACITANCE VS.
| Part Number | Description |
|---|---|
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| SD11810 | 650V Silicon Carbide Schottky Diode |
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