Datasheet Details
| Part number | SD11806 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 1.20 MB |
| Description | Dual 1200V Silicon Carbide Schottky Diode |
| Datasheet | SD11806-SolitronDevices.pdf |
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Overview: SD11806 Dual 1200V Silicon Carbide Schottky Diode - 1 KEY.
| Part number | SD11806 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 1.20 MB |
| Description | Dual 1200V Silicon Carbide Schottky Diode |
| Datasheet | SD11806-SolitronDevices.pdf |
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Dual 1200V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C.
Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Maximum Junction Temperature Operating Temperature Range Storage Temperature Range SYMBOL VR VRRM VRSM VDC IF(avg) IFRM IFSM PD TJ(max) T TSTG VALUE 1200V 1200V 1200V 1200V TEST CONDITIONS 20A/40A 77A/154A 82A/164A 104W 175°C -55°C to +175°C -55°C to +175°C Limited by TJ Duty cycle = 10%, limited by TJ PW = 8.3ms sinusoidal, TJ = 25°C Limited by TJ CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11806 Dual 1200V Silicon Carbide Schottky Diode - 2 TYPICAL PERFORMANCE CURVES 30 FORWARD VOLTAGE vs FORWARD CURRENT 30 25 TJ = -25°C TJ = 25°C 25 20 TJ = 125°C FORWARD VOLTAGE vs FORWARD CURRENT TJ = 175°C TJ = -25°C 10k TJ = 25°C TJ = 125°C CAPACITANCE VS.
REVERSE VOLTAGE ( @ 1MHZ, 25°C) TJ = 175°C FORWARD CURRENT (IF) A FORWARD CURRENT (IF) A CAPACITANCE (C) pF 20 1k 15 15 10 10 100 5 REVERSE LEAKAGE CURRENT (IR) µA CAPACITANCE (C) pF REVERSE LEAKAGE CURRENT (IR) µA THETA (C/W) 5 0 0 1000 100 10 0.1 0.01 0.001 0 0 0 0.5 1 0 1.5 2.5 FORWARD VOLTAG1E00(.V0F1) V 0.1 0.5 1 0 CAPAC1I.T5ANCE VS.
| Part Number | Description |
|---|---|
| SD11801 | 1200V Silicon Carbide Schottky Diode |
| SD11803 | 1200V 10A Silicon Carbide Schottky Diode |
| SD11807 | 650V Silicon Carbide Schottky Diode |
| SD11808 | 1700V 10A Silicon Carbide Schottky Diode |
| SD11810 | 650V Silicon Carbide Schottky Diode |
| SD11812 | 1200V Silicon Carbide Dual Schottky Doubler Diode |
| SD11428 | 1200V Silicon Carbide IGBT |
| SD11461 | N-Channel Power MOSFET |
| SD11704 | 900V SiC N-Channel Power MOSFET |
| SD11705 | 1200V SiC N-Channel Power MOSFET |