Datasheet Details
| Part number | SD11807 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 1.24 MB |
| Description | 650V Silicon Carbide Schottky Diode |
| Datasheet | SD11807-SolitronDevices.pdf |
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Overview: SD11807 650V Silicon Carbide Schottky Diode - 1 KEY.
| Part number | SD11807 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 1.24 MB |
| Description | 650V Silicon Carbide Schottky Diode |
| Datasheet | SD11807-SolitronDevices.pdf |
|
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650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C.
Reverse Voltage VR 650V Repetitive Peak Voltage VRRM 650V Surge Peak Reverse Voltage VRSM 650V DC Blocking Voltage VDC 650V DC Forward Current IF(avg) 50A TC = 25°C 50A TC = 125°C Repetitive Peak Forward Current IFRM Non-Repetative Forward Surge Current IFSM Power Dissipation PD 46A 30A 90A 70A 150W 180W TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC = 25°C TC = 125°C Maximum Junction Temperature Operating Temperature Range TJ(max) +175°C T -55°C to +175°C Storage Temperature Range Lead Temperature for 10 Seconds TSTG -55°C to +175°C TL 220°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11807 650V Silicon Carbide Schottky Diode - 2 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter DC Blocking Voltage Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance Symbol Min.
Typ.
| Part Number | Description |
|---|---|
| SD11801 | 1200V Silicon Carbide Schottky Diode |
| SD11803 | 1200V 10A Silicon Carbide Schottky Diode |
| SD11806 | Dual 1200V Silicon Carbide Schottky Diode |
| SD11808 | 1700V 10A Silicon Carbide Schottky Diode |
| SD11810 | 650V Silicon Carbide Schottky Diode |
| SD11812 | 1200V Silicon Carbide Dual Schottky Doubler Diode |
| SD11428 | 1200V Silicon Carbide IGBT |
| SD11461 | N-Channel Power MOSFET |
| SD11704 | 900V SiC N-Channel Power MOSFET |
| SD11705 | 1200V SiC N-Channel Power MOSFET |