Datasheet Details
| Part number | SD11808 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 121.92 KB |
| Description | 1700V 10A Silicon Carbide Schottky Diode |
| Datasheet | SD11808-SolitronDevices.pdf |
|
|
Overview: SD11808 1700V 10A Silicon Carbide Schottky Diode - 1 PROVISIONAL.
| Part number | SD11808 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 121.92 KB |
| Description | 1700V 10A Silicon Carbide Schottky Diode |
| Datasheet | SD11808-SolitronDevices.pdf |
|
|
|
1700V 10A Silicon Carbide Diode (isolated back side) ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C.
Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation, max.
Maximum Case Temperature Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature for 10 Seconds SYMBOL VR VRRM VRSM VDC IF(avg) IFRM IFSM PD TC(max) TJ(max) TOP TSTG TL VALUE 1700V 1700V 1700V 1700V 10A 10A 44A 55A 41A 66W 21W 175°C 225°C -55°C to +210°C -55°C to +210°C 260°C TEST CONDITIONS TC = 25°C TC = 125°C TC = 125°C, tp = 10ms, Half Sine Pulse TC = 25°C, tp = 8.3ms, Half Sine Pulse TC = 150°C, tp = 8.3ms, Half Sine Pulse TC = 25°C TC = 125°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com PROVISIONAL sd11808-ds-revB-0522.indd SD11808 1700V 10A Silicon Carbide Schottky Diode - 2 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Symbol Min.
| Part Number | Description |
|---|---|
| SD11801 | 1200V Silicon Carbide Schottky Diode |
| SD11803 | 1200V 10A Silicon Carbide Schottky Diode |
| SD11806 | Dual 1200V Silicon Carbide Schottky Diode |
| SD11807 | 650V Silicon Carbide Schottky Diode |
| SD11810 | 650V Silicon Carbide Schottky Diode |
| SD11812 | 1200V Silicon Carbide Dual Schottky Doubler Diode |
| SD11428 | 1200V Silicon Carbide IGBT |
| SD11461 | N-Channel Power MOSFET |
| SD11704 | 900V SiC N-Channel Power MOSFET |
| SD11705 | 1200V SiC N-Channel Power MOSFET |