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SD11810 Datasheet 650v Silicon Carbide Schottky Diode

Manufacturer: Solitron Devices

Overview: SD11810 650V Silicon Carbide Schottky Diode - 1 KEY.

Datasheet Details

Part number SD11810
Manufacturer Solitron Devices
File Size 87.90 KB
Description 650V Silicon Carbide Schottky Diode
Datasheet SD11810-SolitronDevices.pdf

General Description

650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C.

Reverse Voltage VR 650V Repetitive Peak Voltage VRRM 650V Surge Peak Reverse Voltage VRSM 650V DC Blocking Voltage VDC 650V DC Forward Current IF(avg) 88A TC = 25°C 39A TC = 125°C Repetitive Peak Forward Current IFRM Non-Repetative Forward Surge Current IFSM Power Dissipation PD 128A tbd 260A tbd 283W 123W TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC = 25°C TC = 125°C Maximum Junction Temperature Operating Temperature Range TJ(max) +175°C T -55°C to +175°C Storage Temperature Range Lead Temperature for 10 Seconds TSTG -55°C to +175°C TL 220°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11810 650V Silicon Carbide Schottky Diode - 2 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter DC Blocking Voltage Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance Symbol Min.

Typ.

Key Features

  • NO.

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