Datasheet Details
| Part number | SD11812 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 223.25 KB |
| Description | 1200V Silicon Carbide Dual Schottky Doubler Diode |
| Datasheet |
 SD11812 Datasheet
|
|
|
| Part number | SD11812 |
|---|---|
| Manufacturer | Solitron Devices |
| File Size | 223.25 KB |
| Description | 1200V Silicon Carbide Dual Schottky Doubler Diode |
| Datasheet |
SD11812 Datasheet
|
|
|
|
1200V Silicon Carbide Doubler Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C.
Reverse Voltage VR 1200V DC Forward Current IF(avg) 20A TC = 65°C Repetitive Peak Forward Current IFRM 50A tp=8.3ms, Sine per leg Non-Repetative Forward Surge Current IFSM 250A tp=10µs, Pulse per leg Power Dissipation PD 40W Thermal Resistance RӨJC 1.00°C/W Maximum Junction Temperature TJ(max) +175°C Operating Temperature Range T -55°C to +200°C Storage Temperature Range TSTG -55°C to +200°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SD11812 1200V Silicon Carbide Dual Schottky Doubler Diode - 2 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Parameter Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance Symbol Min.
Typ.
SD11812 1200V Silicon Carbide Dual Schottky Doubler Diode - 1.
| Part Number | Description |
|---|---|
| SD11810 | 650V Silicon Carbide Schottky Diode |
| SD11801 | 1200V Silicon Carbide Schottky Diode |
| SD11803 | 1200V 10A Silicon Carbide Schottky Diode |
| SD11806 | Dual 1200V Silicon Carbide Schottky Diode |
| SD11807 | 650V Silicon Carbide Schottky Diode |
| SD11808 | 1700V 10A Silicon Carbide Schottky Diode |
| SD11428 | 1200V Silicon Carbide IGBT |
| SD11461 | N-Channel Power MOSFET |
| SD11704 | 900V SiC N-Channel Power MOSFET |
| SD11705 | 1200V SiC N-Channel Power MOSFET |