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SDD50065SHD Datasheet Dual 650v Silicon Carbide Schottky Diode

Manufacturer: Solitron Devices

Overview: SDD50065SHD Dual 650V Silicon Carbide Schottky Diode - 1 KEY.

Datasheet Details

Part number SDD50065SHD
Manufacturer Solitron Devices
File Size 113.49 KB
Description Dual 650V Silicon Carbide Schottky Diode
Datasheet SDD50065SHD-SolitronDevices.pdf

General Description

Dual 650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C.

Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Isolation Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Maximum Case Temperature Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature for 10 Seconds SYMBOL VR VRRM VRSM VDC VISO IF(avg) IFRM IFSM PD TC(max) TJ(max) T TSTG TL VALUE 1300V 1300V 1300V 1300V 1500V 50A 50A 46A 30A 90A 70A 150W 180W +125°C +175°C -55°C to +175°C -55°C to +175°C 220°C TEST CONDITIONS TC = 25°C TC = 125°C TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC=25°C, tp=10ms, Half Sine Pulse TC=125°C, tp=10ms, Half Sine Pulse TC = 25°C TC = 125°C CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com SDD50065SHD Dual 650V Silicon Carbide Schottky Diode - 2 TYPICAL PERFORMANCE CURVES 7 FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE (V) 6 T = +200°C T = +175°C 5 T = +150°C T = +125°C 4 T = +25°C T = -55°C 3 2 1 REVERSE LEAKAGE CURRENT (µA) 0 0.1 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 FORWARD CURENT (A) CAPACITANCE VS.

REVERSE VOLTAGE 900 REVERSE LEAKAGE CURRENT vs REVE8R0S0E VOLTAGE 120 700 100 600 500 T = +200°C CAPACITANCE (pF) 80 400 300 T = +175°C 60 200 100 T = +150°C 40 0 0 200 400 T = +125°C600 800 1000 1200 20 REVERSE VOLTAGE (V) T = +25°C T = -55°C 0 200 400 600 800 1000 1200 1300 REVERSE VOLTAGE (V) CAPACITANCE (pF) 900 800 700 600

Key Features

  • VRRM 650V IF @ 125°C 50A.

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