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CXK77B3610GB Datasheet High Speed Bi-CMOS Synchronous Static RAM

Manufacturer: Sony Semiconductor Solutions

Overview: CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office.

Download the CXK77B3610GB datasheet PDF. This datasheet also includes the CXK77B3610GB- variant, as both parts are published together in a single manufacturer document.

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General Description

The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits.

This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and

Key Features

  • the delayed write system to reduce the dead cycles. Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz.
  • Inputs and outputs are LVTTL/LVCMOS compatible.
  • Single 3.3V power supply: 3.3V ± 0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru m.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Sony Corporation Logo CXK77B3610GB-6 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation
Sony Corporation Logo CXK77B3610GB-7 High Speed Bi-CMOS Synchronous Static RAM Sony Corporation

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