CXK58512TM ram equivalent, 65536-word x 8-bit high speed cmos static ram.
* Fast access time (Access time) -55LL 55ns (Max.) -70LL 70ns (Max.) -10LL 100ns (Max.)
* Low standby current 10µA (Max.)
* Low data retention current 6µA (Ma.
The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Special feature are low power consumption, high speed..
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