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Sony Semiconductor Electronic Components Datasheet

DM-111A Datasheet

Magneto-Resistance Element

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DM-111A
Magneto-Resistance Element
For the availability of this product, please contact the sales office.
Description
The DM-111A is a highly sensitive magnetic
M-102 (Plastic)
resistance element, composed of an evaporated
ferromagnetic alloy on a silicon substrate. The
element can be used for detection of rotational
speed and for detection of angle of rotation and as a
detection of position.
Features
Low power consumption
38µW (Typ.) at VCC=5V
Low magnetic field and high sensitivity
75mVp-p (Typ.) at VCC=5V
and H=4000A/m
High reliability
Ensured through silicon nitride protective filming
Absolute Maximum Ratings (Ta=25°C)
Supply voltage
VCC 10
Operating temperature Topr –40 to +80
Storage temperature
Tstg –50 to +100
V
°C
°C
Recommended Operating Condition 5
V
Electrical Characteristics
Item
Total resistance
Symbol
RT
Midpoint potential
VC
Output voltage
VO
Condition
H=4000A/m, θ=45°
VCC=5V , H=4000A/m
Revoiving magnetic field
VCC=5V , H=4000A/m
Revoiving magnetic field
Min.
500
2.47
30
Typ.
650
2.50
75
(Ta=25°C)
Max.
800
Unit
k
2.53 V
mVp-p
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E94706A5X-TE


Sony Semiconductor Electronic Components Datasheet

DM-111A Datasheet

Magneto-Resistance Element

No Preview Available !

Equivalent Circuit
RA RB
12
3
DM-111A
H
θ
RA max
1
RA : Resistance reduces as the
RB min
magnetic field revolves.
RB : Resistance increases as the
23
magnetic field revolves.
Introduction
1) Power supplying pin output pin
111A
12 3
RA
RB
1
2
3
VCC
2) Sensitive direction vs. Midpoint potential
Midpoint potential
a
VCC Hs
2
H
b
cd
b
ae
Direction of Magnetic-
flux
Incidence
e Sensitive
Non-sensitive
d
Direction of Magnetic-
flux
Incidence
Useful Region
c
Changes occur to the output voltage at the saturation region
of V-H curve according to the direction of magnetic flux.
These changes provide for the operation.
• With one rotation of magnetic flux, signals for 2 periods are
obtained.
—2—


Part Number DM-111A
Description Magneto-Resistance Element
Maker Sony Corporation
Total Page 7 Pages
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