* Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 package. S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 25 + - 12 15 45 5
SSD3055LA Datasheet (78.39 KB)
SSD3055LA
South Sea Semiconductor
78.39 KB
N-channel mosfet.
SSD3055LA N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 65 @VGS = 10V 25V 15A 85 @VGS = 4.5V G S D TO-252 D FEA.
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