Full PDF Text Transcription for SSS3402 (Reference)
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SSS3402 N-Channel Enhancement Mode MOSFET Product Summary VDS (V) 30V SOT-23 D ID (A) 4.6A RDS(ON) (mΩ) Max 30 @VGS = 10V G 50 @VGS = 4.5V S D FEATURES Super high density...
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mΩ) Max 30 @VGS = 10V G 50 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free. o G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed b Symbol VDS VGS 25 C 70 C o o Limited 30 + - 20 4.6 3.75 16 1.25 1.25 0.