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ST2302 - 3.6A N-Channel Enchancement Mode MOSFET

Description

ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as c

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Datasheet Details

Part number ST2302
Manufacturer Stanson Technology
File Size 186.97 KB
Description 3.6A N-Channel Enchancement Mode MOSFET
Datasheet download datasheet ST2302 Datasheet

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ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 3 D G S 1 2 FEATURE 20V/3.6A, RDS(ON) = 70mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 95 mΩ @VGS = 2.
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