Datasheet4U Logo Datasheet4U.com

STN4110 - 40A N-Channel Enhancement Mode MOSFET

General Description

STN4110 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

📥 Download Datasheet

Datasheet Details

Part number STN4110
Manufacturer Stanson Technology
File Size 869.43 KB
Description 40A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN4110 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STN4110 N Channel Enhancement Mode MOSFET 40.0A DESCRIPTION STN4110 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE 60V/20.0A, RDS(ON) = 10mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 12mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Date Code Q:Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STN4110 2010. V1 STN4110 N Channel Enhancement Mode MOSFET 40.