Datasheet Details
| Part number | STN4822 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 510.05 KB |
| Description | MOSFET |
| Datasheet |
 STN4822-StansonTechnology.pdf
|
| Part number | STN4822 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 510.05 KB |
| Description | MOSFET |
| Datasheet |
STN4822-StansonTechnology.pdf
|
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capabili
📁 STN4822 Similar Datasheet