The STN6562 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
| Part number | STN6562 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 771.50 KB |
| Description | 4A Dual N-Channel Enhancement Mode MOSFET |
| Datasheet |
 STN6562 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STN6469 | UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | SSDI |
| STN6470 | UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | SSDI |
| STN6471 | UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | SSDI |
| STN6472 | UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | SSDI |
| STN6473 | UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR | SSDI |
| Part Number | Description |
|---|---|
| STN6303 | MOSFET |
| STN6335 | 0.95A Dual N-Channel Enhancement Mode MOSFET |
| STN1012 | MOSFET |
| STN1304 | 2A N-Channel Enhancement Mode MOSFET |
| STN1810 | MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
