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STN8822A
Dual N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6
FEATURE
20V/6.0A, RDS(ON) = 25m-ohm @VGS =4.5V
20V/5.0A, RDS(ON) =42m-ohm @VGS =2.