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Stanson Technology

STP3467ST6RG Datasheet Preview

STP3467ST6RG Datasheet

P Channel Enhancement Mode MOSFET

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STP3467
P Channel Enhancement Mode MOSFET
-5.2A
DESCRIPTION
The STP3467 is the P-Channel enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
PIN CONFIGURATION
TSOP-6P
D SD
FEATURE
-20V/-5.0A, RDS(ON)=90mohm@VGS=-4.5V
-20V/-3.5A, RDS(ON)=110mohm@VGS=-2.5V
-20V/-1.7A, RDS(ON)=140mohm@VGS=-1.8V
67YW
D DG
Y: Year
A: Week Code
Super high density cell design for extremely low
RDS(ON)
Exceptional an-resistance and maximum DC
current capability
TSOP-6P package design
ORDERING INFORMATION
Part Number
Package
Part Marking
STP3467ST6RG
TSOP-6
67YW
Week Code Code : A ~ Z ; a ~ z
STP3467ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3467 2008. V1




Stanson Technology

STP3467ST6RG Datasheet Preview

STP3467ST6RG Datasheet

P Channel Enhancement Mode MOSFET

No Preview Available !

STP3467
P Channel Enhancement Mode MOSFET
-5.2A
ABSOULTE MAXIMUM RATINGS (Ta = 25unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (TJ=150) TA=25
TA=70
Pulsed Drain Current
ID
IDM
-5.2
-4.2
-20
A
A
Continuous Source Current (Diode Conduction)
IS
-1.7
A
Power Dissipation
Operation Junction Temperature
TA=25
TA=70
PD
TJ
2.0
1.3
-55/150
W
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
90
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP3467 2008. V1


Part Number STP3467ST6RG
Description P Channel Enhancement Mode MOSFET
Maker Stanson Technology
Total Page 6 Pages
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