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Stanson Technology

STP4435 Datasheet Preview

STP4435 Datasheet

P Channel Enhancement Mode MOSFET

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STP4435
P Channel Enhancement Mode MOSFET
-10A
DESCRIPTION
STP4435 is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
FEATURE
l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.)
@VGS =-10V
l -30V/-7.0A, RDS(ON) = 30mΩ
@VGS = -4.5V
l Super high density cell design for
extremely low RDS(ON)
l Exceptional on-resistance and maximum
DC current capability
l SOP-8 package design
PART MARKING
SOP-8
YYear Code
APreduce Code
BProcess Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435 2007. V1




Stanson Technology

STP4435 Datasheet Preview

STP4435 Datasheet

P Channel Enhancement Mode MOSFET

No Preview Available !

STP4435
P Channel Enhancement Mode MOSFET
-10A
ABSOULTE MAXIMUM RATINGS (Ta = 25Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current
(TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operation Junction Temperature
VGSS
ID
IDM
IS
PD
TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
-30
±20
-10.0
-7.0
-50
-2.3
2.8
1.8
-55/150
-55/150
70
Unit
V
V
A
A
A
W
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435 2007. V1


Part Number STP4435
Description P Channel Enhancement Mode MOSFET
Maker Stanson Technology
Total Page 6 Pages
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