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Sunmate

GF1J Datasheet Preview

GF1J Datasheet

SURFACE MOUNT SILICON RECTIFIER DIODES

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GF1A - GF1M
SURFACE MOUNT SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.0 A
Features
! Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
! Ideal for surface mount automotive applications
! High temperature metallurgically bonded construction
! Glass passivated cavity-free junction
! Capable of meeting environmental standards of
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
B
A
J
H
G
E
SMA(DO-214AC)
Dim Min Max
C A 2.29 2.92
B 4.00 4.60
C 1.27 1.63
D D 0.15 0.31
E 4.80 5.59
G 0.10 0.20
H 0.76 1.52
J 2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit
Maximum repetitive peak reverse voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
35 70 140
50 100 200
280 420 560 700
400 600 800 1000
V
V
Maximum average forward rectified current
at TL=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
I(AV)
IFSM
1.0 A
30.0 A
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=125°C
VF
IR
1.10
5.0
50.0
1.20 V
µA
Typical reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
trr
CJ
RΘJA
RΘJL
TJ, TSTG
2.0
15.0
80.0
26.0
-65 to +175
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
1 of 2
www.sunmate.tw




Sunmate

GF1J Datasheet Preview

GF1J Datasheet

SURFACE MOUNT SILICON RECTIFIER DIODES

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES GF1A THRU GF1M
FIG. 1 - FORWARD CURRENT DERATING CURVE
60 HZ
RESISTIVE OR
1.0
INDUCTIVE LOAD
P.C.B. MOUNTED on
0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
25 (JEDEC Method)
20
0.5
0
100 110 120 130 140 150 160
LEAD TEMPERATURE, °C
175
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
15
10
5.0
0
1
10
NUMBER OF CYCLES AT 60 HZ
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
1
TJ=100°C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
1.6
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
30
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
0.1
0.01
0
TJ=25°C
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
100
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
MOUNTED ON 0.20 x 0.27” (5 x 7mm)
COPPER PAD AREAS
10
1
1
1 10 100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1 1 10
t, PULSE DURATION, sec
100
2 of 2
www.sunmate.tw


Part Number GF1J
Description SURFACE MOUNT SILICON RECTIFIER DIODES
Maker Sunmate
Total Page 2 Pages
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