GP15A - GP15M
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 1.5 A
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
Mechanical Data
! Case: D O - 1 5
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.40 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
ABA
D
DO-15
Dim Min Max
A 25.40 —
B
5.50
7.62
C
0.686
0.889
D
2.60
3.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbo GP15A GP15B GP15D GP15G GP15J GP15K GP15M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM 50 100 200 400 600 800 1000
VR
V
RMS Reverse Voltage
VR(RMS)
35
70 140 280 420 560 700
V
Average Rectified Output Current
(Note 1)
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IO
IFSM
1.5
50
A
A
Forward Voltage
@IF = 2.0A
VFM
1.1
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
IRM
5.0
200
µA
Typical Junction Capacitance (Note 2)
Cj
15
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RJA
45 °C /W
Operating Temperature Range
Tj
-65 to +125
°C
Storage Temperature Range
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
-65 to +150
°C
1 of 2
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