IRF10N40 Datasheet - Suntac Electronic

POWER MOSFET

IRF10N40 Features

* Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature PIN CONFIGURATION TO-220 SYMBOL D Top View G ATE

IRF10N40 General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers.

IRF10N40 Datasheet (110.33 KB)

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Datasheet Details

Part number:

IRF10N40

Manufacturer:

Suntac Electronic

File Size:

110.33 KB

Description:

Power mosfet.

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IRF10N40 POWER MOSFET Suntac Electronic

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IRF10N40 Features

IRF10N40 General Description

Datasheet Details

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