dual n-channel enhancement mode mosfet.
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20V/6A, RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 34mΩ(typ.) @ VGS= 2.5V
Pin Description
S2 G2 S2 D2
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Super High Dense Cell Design Reliable and R.
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Power Management in Notebook Computer, Portable Equipment, and Battery Powered Systems.
(4) G1 (5) G2
S1 (2) (3)
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S2 G2 S2 D2
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Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
(1) D1
S1 G1
D1 S1
Top View of TSSOP − 8
(8) D2
Applications
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Power Management in Notebook Computer, Port.
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