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SSF20N60S - 600V N-Channel MOSFET

General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Key Features

  • 650V @TJ = 150°C.
  • Typ. RDS(on) = 0.16 .
  • Ultra Low Gate Charge (typ. Qg = 70nC).
  • 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy.

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Datasheet Details

Part number SSF20N60S
Manufacturer Super Semiconductor
File Size 586.33 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSF20N60S Datasheet

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Full PDF Text Transcription (Reference)

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SSP20N60S / SSF20N60S 600V N-Channel MOSFET September, 2012 SJ-FET SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.16  • Ultra Low Gate Charge (typ.