SSF20N60S Key Features
- 650V @TJ = 150°C
- Typ. RDS(on) = 0.16
- Ultra Low Gate Charge (typ. Qg = 70nC)
- 100% avalanche tested
- Part: SSF20N60S
- Manufacturer: Super Semiconductor
- Size: 586.33 KB
Other SSF20N60S Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Silikron |
SSF20N60H | MOSFET |
SSF20N60S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching...