DN3765 Description
This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This bination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway...
DN3765 Key Features
- High input impedance -- Low input capacitance -- Fast switching speeds -- Low on-resistance -- Free from secondary break