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DN3765 - N-Channel Depletion-Mode Vertical DMOS FET

General Description

This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process.

Key Features

  • High input impedance.
  • Low input capacitance.
  • Fast switching speeds.
  • Low on-resistance.
  • Free from secondary breakdown.
  • Low input and output leakage.

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Datasheet Details

Part number DN3765
Manufacturer Supertex
File Size 301.16 KB
Description N-Channel Depletion-Mode Vertical DMOS FET
Datasheet download datasheet DN3765 Datasheet

Full PDF Text Transcription for DN3765 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DN3765. For precise diagrams, and layout, please refer to the original PDF.

Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►►...

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Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage Applications ►► Normally-on switches ►► Solid state relays ►► Converters ►► Linear amplifiers ►► Constant current sources ►► Telecom General Description This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.