Vertical DMOS FET Quad Array
RDS (ON) Max
Q1 + Q2 or Q3 + Q4
* Same as SO-20 with 300 mil wide body.
Order Number / Package
Advanced DMOS Technology
s 4 independent channels
s 4 electrically isolated die
s Commercial and military versions available
s Free from secondary breakdown
s Low power drive requirement
s Low CISS and fast switching speeds
s High input impedance and high gain
s Complementary N- and P-channel devices
These enhancement-mode (normally-off) DMOS FET arrays
utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex quad arrays use four independent DMOS transistors.
They are ideally suited to a wide range of switching and amplify-
ing applications where high breakdown voltage, high input im-
pedance, low input capacitance, and fast switching speeds are
s Telecom switches
s Logic level interfaces
s Battery operated systems
s Photo voltaic drives
s Solid state relays
s Motor controls
Refer to TN0604WG and TP0604WG data sheet for detailed
characteristics of N- and P-channel devices.
ID continuous & IDR (single die)
ID pulsed+ & IDRM+
Power Dissipation @ TC = 25°C‡
+ Pulse test 300 µS pulse, 2% duty cycle.
‡ Total for package.
G1 4 P-Q1
G2 7 N-Q2
SOW - 20
Note: See Package Outline section for dimensions.
This datasheet has been downloaded from http://www.digchip.com at this page