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Supertex

TC6320 Datasheet Preview

TC6320 Datasheet

N- and P-Channel Enhancement-Mode MOSFET

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Supertex inc.
TC6320
N- and P-Channel
Enhancement-Mode MOSFET Pair
Features
►Integrated GATE-to-SOURCE resistor
►Integrated GATE-to-SOURCE Zener diode
►Low threshold
►Low on-resistance
►Low input capacitance
►Fast switching speeds
►Free from secondary breakdown
►Low input and output leakage
►Independent, electrically isolated N- and
P-channels
Applications
►High voltage pulsers
Amplifiers
Buffers
►Piezoelectric transducer drivers
►General purpose line drivers
►Logic level interfaces
General Description
The Supertex TC6320 consists of high voltage, low threshold
N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN
packages. Both MOSFETs have integrated GATE-to-SOURCE
resistors and GATE-to-SOURCE Zener diode clamps which are
desired for high voltage pulser applications. It is a complimentary,
high-speed, high voltage, GATE-clamped N- and P-channel
MOSFET pair, which utilizes an advanced vertical DMOS
structure and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the power
handling capabilities of bipolar transistors and with the high
input impedance and positive temperature coefficient inherent in
MOS devices. Characteristic of all MOS structures, this device
is free from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low
input capacitance, and fast switching speeds are desired.
Typical Application Circuit
VDD VH
OE
INA
10nF
INB
VSS
10nF
VL
Supertex
MD12xx, MD17xx, or MD18xx
+100V
Supertex
TC6320
-100V
Doc.# DSFP-TC6320
D012913
Supertex inc.
www.supertex.com




Supertex

TC6320 Datasheet Preview

TC6320 Datasheet

N- and P-Channel Enhancement-Mode MOSFET

No Preview Available !

Ordering Information
Part Number Package Option
TC6320K6-G 8-Lead DFN (4x4)
TC6320TG-G 8-Lead SOIC
-G indicates package is RoHS compliant (‘Green’)
Packing
3000/Reel
2000/Reel
TC6320
Product Summary
BVDSS/BVDGS
(V)
N-Channel P-Channel
200 -200
RDS(ON)
(max) (Ω)
N-Channel P-Channel
7.0 8.0
Pin Configurations
Absolute Maximum Ratings
Parameter
Value
DRAIN-to-SOURCE voltage
BVDSS
DRAIN-to-GATE voltage
BVDGS
Operating and storage temperature
-55°C to +150°C
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Typical Thermal Resistance
Package
8-Lead DFN
θja
44OC/W
8-Lead SOIC
Note:
1.0oz, 4-layer, 3”x4” PCB
101OC/W
SN 1
8 DN
DN
GN 2
7 DN
GP 3
6 DP
DP
SP 4
5 DP
8-Lead DFN
(top view)
S1 1
G1 2
S2 3
G2 4
N-Channel
P-Channel
8-Lead SOIC
(top view)
8 D1
7 D1
6 D2
5 D2
Package Marking
6320
YWLL
Y = Last Digit of Year Sealed
W = Code for Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead DFN
YYWW
C6320
LLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
8-Lead SOIC
Doc.# DSFP-TC6320
D012913
Supertex inc.
2 www.supertex.com


Part Number TC6320
Description N- and P-Channel Enhancement-Mode MOSFET
Maker Supertex
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