Vertical DMOS Power FETs
Order Number' Package
0 Freedom from secondary breakdown
0 Low power drive requirement
0 Ease of paralleling.
0 Low CISS and fast switching speeds
0 Excellent thermal stability
0 Integral Source-Drain diode
0 High input impedance and high gain
0 Very low threshold voltage
o Telecommunications: Outpulsing switch
o Battery operated systems
o Solid state relays
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar tram:i.stors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
(Notes 1 and 2)
Absolute Maximum Ratings
Operating and Storage Temperature
*Oistance of 1.6 mm from case for 10 seconds.
-55°C to +150°C
Note t: See Package Outline section for discrete pinouts.
Note 2: See Array section for quad pinouts.