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TN0604WG Datasheet

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

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TN0604WG
Surface Mount
Ordering Information
BVDSS 1
BVDGS
RDS(ON) Max
40V 0.75Q
'Same as SO·20 with 300 mil wide body.
Preliminary
N-Channel Enhancement-Mode
Vertical DMOS Power FETs Quad Array
Order Num.ber I Package
SOW·20·
TN0604WG
Features
o 4 independent channels
o 4 electrically isolated die
o Commercial and Military versions available
o Freedom from secondary breakdown
o Low power drive requirement
o Low C,ss and fast switching speeds
o High input impedance and high gain
Applications
o Motor control
o Convertors
o Amplifiers
o Switches
o Power supply circuits
o Driver (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Thermal Characteristics
Package
Plastic
SOW·20
10 continuous & lOR (single die)
1.0A
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Electrical Characteristics
Refer to TN06L Data Sheet for detailed characteristics.
Pin Configuration
10 pulsed> & 10RM>
Power Dissipation @ Tc = 25°C*
9ja (OC/W)
9je (OC/W)
*+ Pulse test 300 ~S pulse, 2% duty cycle.
Total for package.
4.0A
1.5W
85
-
top view
SOW-20
10-18


Part Number TN0604WG
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Maker Supertex
Total Page 1 Pages
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