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TP01L - P-Channel Enhancement-Mode Vertical DMOS Power FETs

Features

  • D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h.

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Datasheet Details

Part number TP01L
Manufacturer Supertex
File Size 231.25 KB
Description P-Channel Enhancement-Mode Vertical DMOS Power FETs
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o §upertexinc. TP01L P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -20V -40V ROS(ON) (max) 4.00 4.00 IO(ON) (min) -0.85A -0.85A TO-39 Order Number I Package TO-92 TP0102N2 TP0102N3 TP0104N2 TP0104N3 DICE TP0102ND TP0104ND Features D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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