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TQ3001 Datasheet Preview

TQ3001 Datasheet

N- and P-Channel Quad Power MOSFET Arrays

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'aflI !!iupertex inc.
TQ3001 VQ3001
VQ7254
Surface Mount
N- and P-Channel Quad Power
MOSFET Arrays
Ordering Information
BVoss /
BVoos
ROS(ON)
(max)
Q1 +Q2or
Q3+Q4
VOS(th)
(max)
N·Channel
P·Channel
40V 30
40V 30
20V 30
2.0V
1.SV
2.0V
3.0V
2.4V
3.0V
14·Pin P·Olp
VQ3001NS
TQ3001NS
VQ7254NS
Order Number / Package
14·Pln C·Oip
VQ3001N7
TQ3001N7
VQ7254N7
20 Terminal
LCCQuad
VQ3001NF
TQ3001NF
-
Features
0 Freedom from secondary breakdown
0 Low power drive requirement
0 Ease of paralleling
0 Low CISS and fast switching speeds
0 Excellent thermal stability
0 Integral Source·Drain diode
0 High input impedance and high gain
0 Complementary N- and P-Channel devices
0 Low Threshold version available
Applications
o Bubble/Memory drivers
o General purpose complementary drivers and switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
"Distance of 1.6 mm from case for 10 seconds.
±20V
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to awide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
10-22




Supertex

TQ3001 Datasheet Preview

TQ3001 Datasheet

N- and P-Channel Quad Power MOSFET Arrays

No Preview Available !

Thermal Characteristics
Ta3001 / va3001 / va7254
Package
ID (continuous)'
NP
Ceramic Dip 850mA -600mA
Plastic Dip 640mA -450mA
20 Terminal 410mA
LCC
-300mA
*Total for 4 die. tEach die.
ID (pulsed)'
NP
3.0A 3.0A
3.0A 3.0A
3.0A 3.0A
Power Dissipation
@Tc=25°C
2.0t
1.5t
1.0t
°J8
°CIW
-
-
-
°Je
°C/W
62.5
83.3
125.0
IDR
NP
850mA -600mA
640mA -450mA
410mA -300mA
IDRM*
NP
3.0A -3.0A
3.0A -3.0A
3.0A -3.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1, 2, and 3)
Symbol
BVoss
Parameter
Drain-to-Source
Breakdown Voltage
Ta3001
Va3001
Va7254
N-Channel P-Channel
Min Max Min Max
40 -40
20 -20
VaS(th)
Gate Threshold Voltage
Va3001
0.8 2.0 -0.8 -3.0
Va7254
Ta3001
0.6 1.6 -1.0 -2.4
Va3001
Va7254
0.5
-0.65
lass
loss
VOS(ON)
ROS(ON)
GFS
C ISS
Cess
CRSS
tdloN
tdOFFl
Vso
Gate Body Leakage
Zero Gate Voltage Drain Current
Total Static
Drain-to-Source
ON-State Resistance
at ~102 or a 3 + ar'O
Total Static
Drain-to-Source
ON-State Resistance
at + a 2 or a 3 + a 4
Va3001
Ta3001
Va7254
Ta3001
Va3001
Ta3001
Va7254
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
Forward ON Voltage
Va7254
100 -100
0.5 -0.5
3.0 3.0
2.0 3.0
5.0
3.0
2.0 3.0
200
175
95
25
30
30
-0.75
-1.20
2.0 3.0
5.0
3.0
2.0 3.0
200
195
100
60
30
30
0.75
1.2
Note 1: All D.C. parameters 100% tested (pulse test: 300)18 pulse. 2% duty cycle).
Note 2: All A.C. parameters sample tested.
Note 3: Refer to device types TN06L and TP06L for characteristic curves.
Unit
V
V
V
V
nA
IIA
V
0
mU
pF
ns
ns
V
Test Conditions
Vas = 0,10 = 1011A
Vas = Vos' 10 = 1mA
TA = 25°C
Vas = Vos' 10 = lmA
TA = 85°C
Vas =16V, Vos = 0
Vas = 0, Vos = 0.8 Min Rating
Vas=ll.4V,lo=lA
Vas = 5.0V, 10 = 250mA
Vas=11.4V,lo=1A
Vos ~ 2VOS(ON)' 10 = 0.5A
Vas = 0, Vos = 12V
f= lMz
Voo = 17V, Rs = 500
RL =150
Vas = 0, IF = 50mA
Vas =0,IF =1A
Switching Waveforms and Test Circuit
td(ON)
Output - - - - - - . I
10%
t(OFF)
J---4'T--0 SCOPE
D.U.T.
10-23
FET polarity in test circuit is N-channel only.


Part Number TQ3001
Description N- and P-Channel Quad Power MOSFET Arrays
Maker Supertex
Total Page 3 Pages
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