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Supertex

VN13A Datasheet Preview

VN13A Datasheet

N-Channel Enhancement-Mode Vertical DMOS Power FETs

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o §upertexinc.
VN13A
N-Channel Enhancement-Mode
Vertical CMOS Power FETs
Ordering Information
BVDSS I
BVOGS
40V
60V
100V
RDS(ON)
(max)
an
an
an
IO(ON)
(min)
O.5A
O.5A
O.5A
Order Number I Package
TO-39
TO-92
VN1304N2
VN1306N2
VN1304N3
VN1306N3
VN1310N2
VN1310N3
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down VOltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
.-
I
Applications
o Motor control
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Package Options
(Note 1)
Absolute Maximum Ratings
Draln-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature"
*Oistance of 1.6 mm from case for 10 seconds.
±20V
a-91
TO-39
TO-92
Note 1: See Package Outline section for discrete pinouts.




Supertex

VN13A Datasheet Preview

VN13A Datasheet

N-Channel Enhancement-Mode Vertical DMOS Power FETs

No Preview Available !

Thermal,Characteristic.s
Package
10 (continuous)"
I~ (pulse(l)"
TO-39
TO-92
O.4A
0.25A
*ID (continuous) Is limited by max rated \
1.4A
1.3A
VN13A
Power Dissipation
@Tc=25°C
3.0W
1.0W
8,.
°CfW
125
170
8,e
°CfW
41.5
125
lOR
O.4A
0.2SA
"10RM
l.4A
1.3A
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbo'
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
VN1310
VN1306
VN1304
Min Typ Max Unit
Conditions
100
60 V ID=lmA,VGS=O
40
VGS(th)
6VGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
-3.9
0.1
2.4
-5
100
~
100
V
mVtC
nA
uA
ID(ON)
ON-State Drain Current
0.25
0.50
0.6
1.4
A
RDS(ON)
6RDS(ON)
Static Drain-to-Source
ON-State Resistance
Change in RDS(ON) with Temperature
n5 15
58
0.8 2 %tc
GFS Forward Transconductarice
200 250
mU
CISS
Input Capacitance
27 35
Coss
Common Source Output Capacitance
13 15
pF
CRSS
Reverse Transfer Capacitance
35
td(ON)
Turn-ON Delay Time
25
tr Rise Time
2 5 ns
td(OFF)
Turn-OFF Delay Time
25
tf Fall Time
25
VSD
Diode Forward Voltage Drop
1.0 1.3
V
trr !;leverse Recovery Time
350 ns
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300l'S pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
VGS = VDS, ID = lmA
ID = lmA, VDS = VGS
VGS =±20V, VDS - 0
VGS - 0, VDS - Max Rating
VGS =0, VDS =0.8 Max Rating
TA = 125°C
VGS - 5V, VDS - 25V
VGS - 10V, VDS - 25V
VGS = 5V, ID = 50mA
VGS - 10V, ID - 500mA
ID = 500mA, VGS = 10V
VDS - 25V, ID - 500mA
VGS = OV, VDS =25V,
f =1 MHz
VDD =25V, ID =500mA,
RS = 50n
ISD = LOA, VGS - 0
ISD-l.0A, VGS=O
Switching Waveforms and Test Circuit
INPUT
OUTPUT
t(ON)
t(OFF)
r - ;;L;'; - - ,
I GENERATOR
I
I-'~-OSCOPE
I
V-I~r-~~
D.U.T.
lI I
I
IL _____ JI -=-
8-92


Part Number VN13A
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Maker Supertex
Total Page 4 Pages
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