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VP05D - P-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP05D
Manufacturer Supertex
File Size 244.46 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP05D Datasheet

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Full PDF Text Transcription

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o !iupertex inc. VP05D Ordering Information BVoss ' BVOGS -350V -400V ROS(ON) (max) 750 750 P-Channel Enhancement-Mode Vertical DMOS Power FETs IO(ON) (min) -200m A -200mA TO·39 Order Number' Package TO·92 VP0535N2 VP0535N3 VP0540N2 VP0540N3 DICE VP0535ND VP0540ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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