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VP05D - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP05D
Manufacturer Supertex
File Size 244.46 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP05D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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o !iupertex inc. VP05D Ordering Information BVoss ' BVOGS -350V -400V ROS(ON) (max) 750 750 P-Channel Enhancement-Mode Vertical DMOS Power FETs IO(ON) (min) -200m A -200mA TO·39 Order Number' Package TO·92 VP0535N2 VP0535N3 VP0540N2 VP0540N3 DICE VP0535ND VP0540ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.