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VP06D - P-Channel Enhancement-Mode Vertical DMOS FETs

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate mar11.lfacturing process. This combination produces devices with the power handling.

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Datasheet Details

Part number VP06D
Manufacturer Supertex
File Size 228.57 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP06D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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"§upertexinc. VP06D P-Channel Enhancement-Mode Vertical DMOSPower FETs Ordering Information BVoss / BVOGS -350V -400V ROS(ON) (max) 250 250 IO(ON) (min) -O.4A -O.4A TO·3f VP0635N2 VP0640N2 Orur Number / Package T0.92 TO·220 VP0635N3 VP0635N5 VP0640N3 VP0640N5 DICE VP0635ND VP0640ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate mar11.lfacturing process.
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