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VP13A - P-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices ID(ON} (min) -O.25A -O.25A -O.25A Order Number I Package TO.
  • 39 TO.
  • 92 VP1304N2 VP1304N3 VP1306N2 VP1306N3 VP1310N2 VP1310N3 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a verti.

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Datasheet Details

Part number VP13A
Manufacturer Supertex
File Size 236.73 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP13A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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(J) §upertexinc. VP13A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -40V -60V -100V ROSION} (max) 250 250 250 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices ID(ON} (min) -O.25A -O.25A -O.25A Order Number I Package TO·39 TO·92 VP1304N2 VP1304N3 VP1306N2 VP1306N3 VP1310N2 VP1310N3 Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.