Vertical DMOS Power FETs
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Order Number I Package
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
o Motor control
o Power supply circuits
o Driver (Relays, Hammers, SolenOids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Absolute Maximum Ratings
Operating and Storage Temperature
"'Distance of 1.6 mm from case for 10 seconds.
Note 1: See Package Outline section for discrete pinouts.