TBN6301 Overview
.. Preliminary Specification NPN SILICON RF TRANSISTOR SOT323 TBN6301 series Unit in mm 2.1±0.1 1.25±0.05 □ Applications - UHF and VHF wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min.
TBN6301 Key Features
- High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA
- High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz
- Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz