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TBN6301 - NPN SILICON RF TRANSISTOR

Description

http://www.tachyonics.co.kr March.

2005.

Rev.

Features

  • igh gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3. Collector.
  • Absolute Maximum Ratings (TA = 25 ℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Operating Junctio.

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Datasheet Details

Part number TBN6301
Manufacturer TACHYONICS
File Size 250.10 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet TBN6301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Preliminary Specification NPN SILICON RF TRANSISTOR SOT323 TBN6301 series Unit in mm 2.1±0.1 1.25±0.05 □ Applications - UHF and VHF wide band amplifier 2.0±0.2 1.30±0.1 1 3 2 0.30±0.1 0.1 Min. □ Features - High gain bandwidth product fT = 6 GHz @ VCE = 3 V, IC = 10 mA fT = 7.5 GHz @ VCE = 5 V, IC = 20 mA - High power gain |S21|2 = 9 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz - Low noise figure NF = 1.4 dB @ VCE = 3 V, IC = 10 mA, f = 1 GHz 0.90±0.1 Pin Configuration (TBN6301U) 1. Base 2. Emitter 3.
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