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2N4400 Datasheet Preview

2N4400 Datasheet

Small Signal General Purpose NPN Transistors

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Small Signal General
Purpose Transistors (NPN)
2N4400/2N4401
Small Signal General Purpose Transistors (NPN)
Features
NPN Silicon Epitaxial Transistor for Switching and
Amplifier Applications
Mechanical Data
Case:
Terminals:
Weight:
TO-92, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.18 gram
TO-92
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N4400 2N4401
Unit
Marking Code
2N4400 2N4401
VCEO
Collector-Emitter Voltage
40 V
VCBO
Collector-Base Voltage
60 V
VEBO
Emitter-Base Voltage
6.0 V
IC
PD
PD
RθJA
Collector Current Continuous
Power Dissipation at TA=25°C
Derate above 25°C
Power Dissipation at TC=25°C
Derate above 25°C
Thermal Resistance Junction to Ambient Air
600 mA
625 mW
5.0 mW/° C
1.5 W
12 mW/° C
200 ° C/W
Conditions
RθJC
TJ ,TSTG
Thermal Resistance Junction to Case
Operation and Storage Junction Temperature
Range
83.3
-55 to +150
° C/W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Rev. A/AH 2008-03-05
Page 1 of 4




TAITRON

2N4400 Datasheet Preview

2N4400 Datasheet

Small Signal General Purpose NPN Transistors

No Preview Available !

Small Signal General Purpose Transistors (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
2N4400/2N4401
Symbol
Description
V(BR)CBO
V(BR)CEO*
V(BR)EBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCE(sat) * Collector Emitter Saturation Voltage
VBE(sat) * Base Emitter Saturation Voltage
ICEV
IBEV
Collector Cut–Off Current
Base Cut–Off Current
hFE*
D.C. Current Gain
hie
hre
fT
CCBO
CEBO
hfe
hoe
td
tr
ts
tf
Input Impedance
Voltage Feedback Ratio
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Small Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
2N4400
2N4401
Min.
60
40
6.0
-
-
0.75
-
-
-
-
20
40
50
20
0.5
Max.
-
-
-
0.40
0.75
0.95
1.20
100
100
-
-
-
150
-
7.5
Min.
60
40
6.0
-
-
0.75
-
-
-
20
40
80
100
40
1.0
Max.
-
-
-
0.40
0.75
0.95
1.20
100
100
-
-
-
300
-
15
0.1 8.0 0.1 8.0
200 - 250 -
- 6.5 - 6.5
- 30 - 30
20 250 40 500
1.0 30 1.0 30
- 15 - 15
- 20 - 20
- 225 - 225
- 30 - 30
*Pulse Test: Pulse Width<300µs, Duty Cycle<2%
Unit
V
V
V
V
V
nA
nA
k
x10־4
MHz
pF
pF
μS
nS
nS
nS
nS
Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=0.4V, VCE=35V
VEB=0.4V, VCE=35V
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=20mA,
f=100MHz
VCB=5V, IE=0
f=100KHz,
VEB=0.5V, IC=0
f=100KHz,
VCE=10V, IC=1mA
f=1KHz,
VCE=10V, IC=1mA
f=1KHz,
VCC=30V, VEB=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
www.taitroncomponents.com
Rev. A/AH 2008-03-05
Page 2 of 4


Part Number 2N4400
Description Small Signal General Purpose NPN Transistors
Maker TAITRON
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2N4400 Datasheet PDF





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