MMBT2907A
-VCEO -VCBO -VEBO
-IC
Ptot fT R θ j-a TJ TSTG
Marking Code Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (D.C) Power Dissipation above 25°C Transition Frequency at f= 100MHz From junction to ambient in
Key Features
PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.
Full PDF Text Transcription for MMBT2907A (Reference)
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MMBT2907A. For precise diagrams, and layout, please refer to the original PDF.
SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: T...
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g and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT2907A SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT2907A -VCEO -VCBO -VEBO -IC Ptot fT R θ j-a TJ TSTG Marking Code Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (D.C) Power Dissipation above 25°C Transition Frequency at f= 100MHz From junction to ambient in free air Junction Temperature Storage Te
MMBT2907A Datasheet
