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MMBT9012 - SMD General Purpose Transistor

General Description

Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current PD Total Device Power Dissipation (Note 1) RθJA PD RθJA TJ TSTG Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Juncti

Key Features

  • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number MMBT9012
Manufacturer TAITRON
File Size 284.18 KB
Description SMD General Purpose Transistor
Datasheet download datasheet MMBT9012 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (PNP) Features  PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) MMBT9012 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCEO VCBO VEBO IC Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current PD Total Device Power Dissipation (Note 1) RθJA PD RθJA TJ TSTG Thermal Resistance, Junction to Ambient Total Device Power Dissipation, Alumina Substrate (Note 2) Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range MMBT9012 -20 -40 -5.0 -0.5 225 1.8 556 300 2.