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TAITRON
TAITRON

MMBTA56 Datasheet Preview

MMBTA56 Datasheet

SMD General Purpose Transistor

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MMBTA56 pdf
SMD General Purpose
Transistor (PNP)
MMBTA55/MMBTA56
SMD General Purpose Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
RoHS compliance
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBTA55
MMBTA56
VCEO
VCBO
VEBO
IC
Marking Code
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
2H/B55
-60
-60
2GM/B56
-80
-80
-4.0
-500
Thermal Characteristics
Symbol
Ptot
RθJA
Ptot
RθJA
TJ, TSTG
Description
Total Device Dissipation FR-5 Board, (Note 1)
TA= 25°C
Derate above 25°C
Thermal Resistance from Junction to Ambient
Total Device Dissipation Alumina Substrate, (Note 2)
TA= 25°C,
Derate above 25°C
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
MMBTA55
MMBTA56
225
1.8
556
300
2.4
417
-55 to +150
Unit
V
V
V
mA
Unit
mW
mW/° C
° C/W
mW
mW/° C
° C/W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. D/AH
Page 1 of 6



TAITRON
TAITRON

MMBTA56 Datasheet Preview

MMBTA56 Datasheet

SMD General Purpose Transistor

No Preview Available !

MMBTA56 pdf
SMD General Purpose Transistor (PNP)
MMBTA55/MMBTA56
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
Collector-Emitter Breakdown Voltage
(Note 3)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
ICBO
Collector-Base Cut-off Current
MMBTA55
Min.
Max.
-60 -
-60 -
-4.0 -
- -0.1
- -0.1
VCB=-60V, IE=0
MMBTA56
Min. Max.
-80 -
-80 -
-4.0 -
- -0.1
- -0.1
VCB=-80V, IE=0
Unit
V
V
V
μA
μA
On Characteristics
Conditions
IC=-1mA, IB=0
IC=-100µA, IE=0
IE=-100µA, IC=0
VCE=-60V, IB=0
Symbol
Description
hFE D.C. Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
MMBTA55
Min.
Max.
-100
-100
-
-
-
-
-0.25
-1.2
MMBTA56
Min. Max.
-100
-100
-
-
-
-
-0.25
-1.2
Unit
V
V
Conditions
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
IC=-100mA, VCE=-1V
Symbol
Description
fT Current Gain-Bandwidth Product
MMBTA55
Min.
Max.
50 -
MMBTA56
Min. Max.
50 -
Unit
MHz
Conditions
VCE=-1V, IC=-100mA,
f=100MHz
Note: 1. FR-5=1.0x0.75x0.062 in.
2. Alumina=0.4x0.3x0.024 in, 99.5% alumina.
3. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
4. fT is defined as the frequency at which hfee x trapolates to unity.
www.taitroncomponents.com
Rev. D/AH
Page 2 of 6


Part Number MMBTA56
Description SMD General Purpose Transistor
Maker TAITRON
Total Page 6 Pages
PDF Download
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