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TIP120 Datasheet Preview

TIP120 Datasheet

Darlington NPN Power Transistors

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Darlington Power Transistors (NPN)
TIP120/121/122
Darlington Power Transistors (NPN)
Features
Designed for general-purpose amplifier and low speed
switching applications
RoHS Compliant
Mechanical Data
Case:
Terminals:
Weight:
TO-220, Plastic Package
Solderable per MIL-STD-202, Method 208
0.08 ounces, 2.24 grams
TO-220
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
TIP120
VCBO
VCEO
VEBO
IC
ICM
IB
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current
60
60
Power Dissipation upto TC=25°C
Power Dissipation Derate above TC=25°C
PD
Power Dissipation upto TA=25°C
Power Dissipation Derate above TA=25°C
RθJA
RθJC
TJ, TSTG
Thermal Resistance from Junction to Ambient in Free Air
Thermal Resistance from Junction to Case
Operating Junction and Storage Temperature Range
TIP121
80
80
5.0
5.0
8.0
120
65
0.52
2.0
16
62.5
1.92
-65 to +150
TIP122
100
100
Unit
V
V
V
A
A
mA
W
W/° C
W
mW/° C
° C /W
° C /W
°C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
Rev. A/AH 2008-06-13
Page 1 of 4




TAITRON

TIP120 Datasheet Preview

TIP120 Datasheet

Darlington NPN Power Transistors

No Preview Available !

Darlington Power Transistors (NPN)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TIP120/121/122
Symbol
Description
*hFE
D.C. Current Gain
*VCEO(sus)
Collector-Emitter Sustaining
Voltage
TIP120
TIP121
TIP122
*VCE(sat) Collector-Emitter Saturation Voltage
*VBE(on) Base-Emitter On Voltage
ICEO
Collector-Emitter Cut-off
Current
TIP120
TIP121
TIP122
ICBO
Collector-Base Cut-off
Current
TIP120
TIP121
TIP122
IEBO
hfe
Cob
ton
toff
Emitter-Base Cut-off Current
Small Signal Current Gain
Output Capacitance
Turn on time
Turn off time
*Pulse Test: Pulse Width300µs, Duty Cycle2%
Min.
Max.
1000
-
1000
-
60 -
80 -
100 -
- 2.0
- 4.0
- 2.5
- 0.5
- 0.5
- 0.5
- 0.2
- 0.2
- 0.2
-2
4.0 -
- 200
Typ. 0.4
Typ. 1.2
Unit
V
V
V
V
V
V
mA
mA
mA
pF
µS
Conditions
VCE=3V, IC=0.5A
VCE=3V, IC=3A
IC=100mA, IB=0
IC=3A, IB=12mA
IC=5A, IB=20mA
IC=3A, VCE=3V
VCE=30V, IB=0
VCE=40V, IB=0
VCE=50V, IB=0
VCB=60V, IE=0
VCB=80V, IE=0
VCB=100V, IE=0
VEB=5V, IC=0
IC=3A, VCE=4V,
f=1.0MHz,
VCB=10V, IE=0,
f=0.1MHz,
IC=3A, RL=10,
IB1=IB2=12mA,
VEB(off)=5V
www.taitroncomponents.com
Rev. A/AH 2008-06-13
Page 2 of 4


Part Number TIP120
Description Darlington NPN Power Transistors
Maker TAITRON
Total Page 4 Pages
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