TIS4D28QES Overview
Description
L Inductance DCR IDC Top Tstg DC Resistance (max.) Rated DC Current (max.) (Note) Operating Temperature Storage Temperature Note: Lower inductance by 35% Value 0.68 ~ 180 20 ~ 1900 0.22 ~ 3.1 -40 to 125 -40 to 125 Unit Conditions µH 100KHz, 250mV, 25°C mΩ 25°C A 100KHz, 250mV °C - °C Rev. A/PQ Page 2 of 10 Specifications Part Number TIS4D28QESR68* TIS4D28QES1R0* TIS4D28QES1R5* TIS4D28QES1R8* TIS4D28QES2R2* TIS4D28QES2R7* TIS4D28QES3R3* TIS4D28QES3R9* TIS4D28QES4R7* TIS4D28QES5R6* TIS4D28QES6R8* TIS4D28QES8R2* TIS4D28QES100* TIS.
Key Features
- Magnetically shielded construction
- Compact and thin
- Large current and low DCR
- RoHS Compliant RC0201 RC0201 RC0201
