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TCLL914B Datasheet Preview

TCLL914B Datasheet

Diode

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SEMICONDUCTOR
500 mW LL-34 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD Power Dissipation
500 mW
TSTG
Storage Temperature Range
-65 to +150
°C
TJ Operating Junction Temperature
+150
°C
WIV Working Inverse Voltage
75 V
IO Average Rectified Current
150 mA
IFM Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
(Pulse Width = 1.0 µsecond)
2A
These ratings are limiting values above which the serviceability of the diode may be impaired.
SURFACE MOUNT
LL34
DEVICE MARKING DIAGRAM
Cathode Band Color : Black
Specification Features:
Fast Switching Device (TRR <4.0 nS)
LL-34 (Mini-MELF) Package
Surface Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Terminals Are Readily Solderable
RoHS Compliant
Matte Tin (Sn) Terminal Finish
Color band Indicates Negative Polarity
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
BV Breakdown Voltage
IR Reverse Leakage Current
VF Forward Voltage
TCLL4448, TCLL914B
TCLL4148, TCLL4148
TCLL4448, TCLL914B
TRR Reverse Recovery Time
C Capacitance
IR=100µA
IR=5µA
VR=20V
VR=75V
IF=5mA
IF=10mA
IF=100mA
IF=10mA, VR=6V
RL=100
IRR=1mA
VR=0V, f=1MHZ
Limits
Min Max
100
75
25
5
0.62
0.72
1.0
1.0
4
4
Unit
Volts
nA
µA
Volts
nS
pF
Number: DB-055
Jan 2011 / H
Page 1




TAK CHEONG

TCLL914B Datasheet Preview

TCLL914B Datasheet

Diode

No Preview Available !

®
TAK CHEONG
Typical Characteristics
500
400
300
200
100
0
0 25 50 75 100 125 150 175
Tem perature []
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
160
Ta=25
150
140
130
120
110
1
10
IR - Reverse Current [uA]
100
Figure 3. Reverse Voltage vs Reverse Current
BV – 1.0uA to 100uA
1500
1400
1300
1200
1100
1000
900
800
Ta=25
700
600
500
400
300
200
100
0.001
0.100
10.000
IF - Forw ard Current [mA]
1000.000
Figure 5. Forward Voltage vs Forward Current
VF – 0.001mA to 800mA
SEMICONDUCTOR
1.5
f = 1MHz
Ta = 25
1.0
0.5
0.0
0
5 10 15 20
VR - Reverse Voltage [V]
25
Figure 2. Total Capacitance
30
60
Ta=25
50
40
30
20
10
0
10
VR - Reverse Voltage [V]
100
Figure 4. Reverse Current vs Reverse Voltage
IR – 10V to 100V
1000
800
Ta= -40
600
Ta=25
400
Ta=65
Ta=125
200
0
0.01
0.1 1 10
IF - Forw ard Current (m A)
100
Figure 6. Forward Voltage vs Ambient Temperature
VF – 0.01mA to 100mA (-40 to +125 Deg C)
Number: DB-055
Jan 2011 / H
Page 2


Part Number TCLL914B
Description Diode
Maker TAK CHEONG
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